CZT2000

S MD Type PNP Silicon Extremely High Voltage Darlington Transistor CZT2000 SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Symbol VCBO VCEO VEBO IC PD TJ,Tstg ÈJA Rating 200 200 10 600 2 -65 to 150 62.5 /W Unit V V V mA W Electrical Characteristics Ta = 25 Symbol ICBO IEBO BVCES VCE(SAT) VCE(SAT) VCE(SAT) VBE(ON) VCB=180V VBE=10V IC=1.0mA IC=20mA, IB=25ìA IC=80mA, IB=40ìA IC=160mA, IB=100ìA VCE=5.0V, IC=160mA VCE=5.0V, IC=100ìA hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=160mA 3,000 3,000 3,000 200 0.9 1.1 1.2 2.0 Testconditons Min Max 500 100 Unit nA nA V V V V V +0.15 1.65-0.15 www.kexin.com.cn 1