CZT2955

SMD S MD Type 2.0W Surface Mount Complementary PNP Silicon Power Transistor KZT2955 (CZT2955) SOT-223 Transistors IC Unit: mm +0.2 3.50-0.2 Features High current (max. 6A). Low voltage (max. 60V). 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector - emitter votage Collector-emitter voltage Emitter-base voltage Collector current Base current Power dissipation Thermal resistance,Junctiion-to-ambient Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO IC IB PD R JA Rating -100 -70 -60 -7 -6 -3 2 62.5 150 -65 to +150 Unit V V V V A A W /W Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector to emitter breakdown voltage Collector to emitter breakdown voltage Collctor cutoff current Emitter cutoff current DC current gain Collector to emitter saturation voltage Base to emitter ON voltage Transition frequency Symbol VCEO VCER ICEO ICEV IEBO hFE IC=-30mA IC=-30mA,RBE=100 VCE=-30V VCE=-100V,VEB=-1.5V VEB = -7.0 V IC =- 4.0A; VCE =-4.0 V IC = -6.0A; VCE = -4.0V VCE(sat) IC = -4.0A; IB =- 400mA VBE(on) fT VCE=-4.0V,IC=-4.0A IC=- 500mA; VCE =-10V; f = 1.0 MHz 2.5 20 5.0 -1.1 -1.5 V V MHz Testconditons Min -60 -70 -700 1.0 -5.0 70 Typ Max Unit V V A mA mA +0.15 1.65-0.15 www.kexin.com.cn 1