CZT3055

SMD S MD Type 2.0W Surface Mount Complementary NPN Silicon Power Transistor KZT3055(CZT3055) SOT-223 6.50 +0.2 -0.2 Transistors IC Features High current (max. 6A). Low voltage (max. 60V). Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector - emitter votage Collector-emitter voltage Emitter-base voltage Collector current Base current power dissipation Thermal resistance Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO IC IB PD R JA Rating 100 70 60 7 6 3 2 62.5 150 -65 to +150 Unit V V V V A A W /W Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector to emitter breakdown voltage Collector to emitter breakdown voltage Collctor cutoff current Emitter cutoff current DC current gain Collector to emitter saturation voltage Base to emitter ON voltage Transition frequency Symbol VCEO VCER ICEO ICEV IEBO hFE IC=30mA IC=30mA,RBE=100 VCE=30V VCE=100V,VEB=1.5V VEB = 7.0 V IC = 4.0A; VCE =4.0 V IC = 6.0A; VCE = 4.0V VCE(sat) IC = 4.0A; IB =400mA VBE(on) fT VCE=4.0V,IC=4.0A IC= 500mA; VCE =10V; f = 1.0 MHz 2.5 20 5.0 1.1 1.5 V V MHz Testconditons Min 60 70 700 1.0 5.0 70 Typ Max Unit V V A mA mA +0.15 1.65-0.15 www.kexin.com.cn 1