CZT5401

S MD Type PNP Silicon Transistor CZT5401 SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Symbol VCBO VCEO VEBO IC PD TJ,Tstg ÈJA Rating 160 150 5 600 2 -65 to 150 62.5 /W Unit V V V mA W Electrical Characteristics Ta = 25 Symbol ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VCB=100V VCB=100V, TA=150 VEB=3.0V IC=100ìA IC=1.0mA IE=10ìA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA fT Cob hfe NF VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200mA, RS=10 Ù,f=10Hz to 15.7kHz 40 50 60 50 100 300 6.0 200 8.0 dB MHz pF 240 160 150 5.0 0.2 0.5 1.0 1.0 Testconditons Min Max 50 50 50 Unit nA mA nA V V V V V V V +0.15 1.65-0.15 www.kexin.com.cn 1