FCX1047A

S MD Type Transistors NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE(sat) 40mÙ at 4A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating 35 10 5 20 4 1 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type FCX1047A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=20V VCE=20V VEB=4V Testconditons Transistors Min 35 10 5 Typ Max Unit V V V 0.3 0.3 0.3 25 50 140 160 220 920 860 280 290 300 200 200 60 430 440 450 350 330 110 150 85 130 230 10 10 10 40 70 200 240 350 1000 950 nA nA nA Collector-emitter saturation voltage * IC=0.5A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=3A, IB=15mA IC=4A, IB=50mA IC=5A, IB=25mA VBE(sat) IC=4A, IB=50mA VBE(on) IC=4A, VCE=2V IC=10mA, VCE=2V IC=0.5A,VCE=2V IC=1A,VCE=2V IC=4A,VCE=2V IC=5A,VCE=2V IC=20A,VCE=2V IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=4A, VCC=10V IB1=IB2=40mA mV Base-emitter saturation voltage * Base-emitter ON voltage * mV mV Static Forward Current Transfer Ratio * hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking 047 2 www.kexin.com.cn