FCX1053A

S MD Type Transistors NPN Silicon Power Switching Transistor FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance. RCE(sat) 78mÙ at 4.5A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating 150 75 5 10 3 1 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type FCX1053A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=120V VCE=120V VEB=4V Testconditons Transistors Min 150 75 5 Typ Max Unit V V V 0.9 1.5 0.3 21 55 150 160 350 900 825 270 300 300 40 440 450 450 60 20 140 21 162 900 10 10 10 30 75 200 210 440 1000 950 1200 - nA nA nA Collector-emitter saturation voltage * IC=0.2A, IB=20mA IC=0.5A, IB=20mA VCE(sat) IC=1A, IB=10mA IC=2A, IB=100mA IC=4.5A, IB=200mA VBE(sat) IC=3A, IB=100mA VBE(on) IC=3A, VCE=2V IC=10mA, VCE=2V IC=0.5A,VCE=2V IC=1A,VCE=2V IC=4.5A,VCE=2V IC=10A,VCE=2V IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=2A, VCC=50V IB1=IB2=20mA mV Base-emitter saturation voltage * Base-emitter ON voltage * mV mV Static Forward Current Transfer Ratio * hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz 30 pF ns ns Marking Marking 053 2 www.kexin.com.cn