FCX1147A

S MD Type Transistors PNP Silicon Power Switching Transistor FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE(sat) 53mÙ at 3A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -15 -12 -5 -20 -3 -500 1 -55 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type FCX1147A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO ICES IEBO VCB=-12V VCE=-10V VEB=-4V Testconditons Transistors Min -15 -12 -5 Typ Max Unit V V V -0.3 -0.3 -0.3 -25 -70 -90 -115 -160 -250 10 10 10 -50 -110 -130 -170 -250 -400 nA nA nA Collector-emitter saturation voltage * IC=-0.1A, IB=-1mA IC=-0.5A, IB=-2.5mA VCE(sat) IC=-1A, IB=-6mA IC=-2A, IB=-20mA IC=-3A, IB=-30mA IC=-5A, IB=-50mA VBE(sat) IC=-3A, IB=-30mA VBE(on) IC=-3A, VCE=-2V IC=-10mA,VCE=-2V IC=-0.5A,VCE=-2V IC=-2A,VCE=-2V IC=-3A,VCE=-2V IC=-5A,VCE=-2V IC=-10A,VCE=-2V IC=-20A,VCE=-2V IC=-50mA, VCE=-10V, f=50MHz VCB=-10V, f=1MHz IC=-4A, VCC=-10V IB1=IB2=-40mA 270 250 200 200 150 90 mV Base-emitter saturation voltage * Base-emitter ON voltage * -820 -1000 -770 450 400 340 300 245 145 50 115 80 150 220 -950 850 mV mV Static Forward Current Transfer Ratio * hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking 147 2 www.kexin.com.cn