FCX1149A

S MD Type Transistors PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance. RCE(sat) 67mÙ at 3A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -30 -25 -5 -10 -3 -500 1 -55 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type FCX1149A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO ICES IEBO VCB=-24V VCE=-20V VEB=-4V Testconditons Transistors Min -30 -25 -5 Typ Max Unit V V V -0.3 -0.3 -0.3 -45 -100 -140 -200 -230 -100 -100 -100 -80 -170 -240 -300 -350 nA nA nA Collector-emitter saturation voltage * IC=-0.1A, IB=-1mA IC=-0.5A, IB=-3mA VCE(sat) IC=-1A, IB=-7mA IC=-3A, IB=-100mA IC=-4A, IB=-140mA VBE(sat) IC=-3A, IB=-100mA VBE(on) IC=-3A, VCE=-2V IC=-10mA,VCE=-2V IC=-0.5A,VCE=-2V IC=-3A,VCE=-2V IC=-5A,VCE=-2V IC=-10A,VCE=-2V IC=-50mA, VCE=-10V, f=50MHz VCB=-10V, f=1MHz IC=-4A, VCC=-10V IB1=IB2=-40mA 270 250 150 115 mV Base-emitter saturation voltage * Base-emitter ON voltage * -930 -1050 -840 450 400 260 190 50 135 10 150 270 -1000 800 mV mV Static Forward Current Transfer Ratio* hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking 149 2 www.kexin.com.cn