S MD Type
Transistors
PNP Silicon Power Switching Transistor FCX1151A
Features
2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE(sat) 66mÙ at 3A.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current *3 Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -45 -40 -5 -5 -3 -500 1 *1 2 *2 -55 to +150 Unit V V V A A mA W W
*1 recommended Ptot calculated using FR4 measuring 15X15X0.6mm *2 Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40X40X0.6mm *3 Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
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1
SMD Type
FCX1151A
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO ICES IEBO VCB=-36V VCE=-32V VEB=-4V Testconditons Min -45 -40 -5
Transistors
Typ
Max
Unit V V V
-0.3 -0.3 -0.3 -60 -120 -140 -200
-100 -100 -100 -90 -180 -220 -300
nA nA nA
Collector-emitter saturation voltage *
IC=-0.1A, IB=-1mA VCE(sat) IC=-0.5A, IB=-5mA IC=-1A, IB=-20mA IC=-3A, IB=-250mA VBE(sat) IC=-3A, IB=-250mA VBE(on) IC=-3A, VCE=-2V IC=-10mA,VCE=-2V IC=-0.5A,VCE=-2V IC=-2A,VCE=-2V IC=-3A,VCE=-2V IC=-5A,VCE=-2V IC=-50mA, VCE=-10V, f=50MHz VCB=-10V, f=1MHz IC=-2A, VCC=-30V IB1=IB2=-20mA 270 250 180 100
mV
Base-emitter saturation voltage * Base-emitter ON voltage *
-985 -1050 -850 450 400 300 190 45 145 40 170 460 -950 800
mV mV
Static Forward Current Transfer Ratio *
hFE
Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02.
fT Cobo t(on) t(off)
MHz pF ns ns
Marking
Marking 151
2
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