FCX458

S MD Type Transistors NPN Silicon Planar High Voltage Transistor FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg Rating 400 400 5 300 1 200 2 -55 to +150 Unit V V V mA A mA W www.kexin.com.cn 1 SMD Type FCX458 Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Currents Collector Cut-Off Currents Emitter Cut-Off Current Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO Transistors Testconditons IC=100ìA IC=10mA* IE=100ìA VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA* IC=50mA, IB=6mA* Min 400 400 5 Max Unit V V V 100 100 100 0.2 0.5 0.9 0.9 100 100 15 50 5 135 Typical 2260 Typical 300 nA nA nA V V V V Emitter Saturation Voltages VCE(sat) VBE(sat) IC=50mA, IB=5mA* IC=50mA, VCE=10V* IC=1mA, VCE=10V Base-Emitter Turn On Voltage VBE(on) Static Forward Current Transfer Ratio hFE IC=50mA, VCE=10V* IC=100mA, VCE=10V* Transition Frequency Collector-Base Breakdown Voltage Switching times fT Cobo ton toff IC=10mA, VCE=20V,f=20MHz VCB=20V, f=1MHz IC=50mA, VCC=100V IB1=5mA, IB2=-10mA 2% MHz pF ns ns * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle Marking Marking N58 2 www.kexin.com.cn