S MD Type
Medium Power Transistor FCX491
SOT-89
+0.1 4.50-0.1
Transistors
Unit: mm
+0.1 1.50-0.1
Features
60 Volt VCEO. 1 Amp continuous current. Ptot= 1 Watt.
+0.1 0.48-0.1
+0.1 1.80-0.1
+0.1 2.50-0.1
+0.1 0.53-0.1
+0.1 4.00-0.1
+0.1 0.80-0.1
+0.1 0.44-0.1
+0.1 2.60-0.1
+0.1 3.00-0.1
+0.1 0.40-0.1
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 80 60 5 1 2 1 -65 to +150 Unit V V V A A W
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1
SMD Type
FCX491
Electrical Characteristics Ta = 25
Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector-base cut-off current Emitter-base current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=100ìA VCEO(sus) IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCE(sat) VCB=60V VCE=60V VEB=4V IC=500mA, IB=50mA IC=1A, IB=100mA Testconditons Min 80 60 5
Transistors
Typ
Max
Unit V V V
100 100 100 0.25 0.5 1.1 1.0 100 100 80 30 150 10 300
nA nA nA V V V
VBE(sat) IC=1A, IB=100mA VBE(on) IC=1A, VCE=5V IC=1mA, VCE=5V
Static Forward Current Transfer Ratio *
hFE
IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V*
Transitional frequency Output capacitance * Pulse test: tp = 300 ìs; d 0.02.
fT Cobo
IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz
MHz pF
Marking
Marking N1
2
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