FCX493

S MD Type Transistors NPN Silicon Planar Medium Power Transistor FCX493 Features Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg Rating 120 100 5 1 2 200 1 -65 to 150 Unit V V V mA A mA W www.kexin.com.cn 1 SMD Type FCX493 Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Currents Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) IC=100ìA IC=10mA* IE=100ìA VCB=100V VCES=100V VEB=4V IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=1A, VCE=10V IC=1mA, VCE=10V* Static Forward Current Transfer Ratio hFE IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* Transition Frequency Collector-Base Breakdown Voltage fT Cobo IC=50mA, VCE=10V,f=100MHz VCB=10V, f=1MHz 2% Testconditons Transistors Min 120 100 5 Max Unit V V V 100 100 100 0.3 0.6 1.15 1.0 100 100 60 20 150 10 300 nA nA nA V V V V MHz pF * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle Marking Marking N93 2 www.kexin.com.cn