FCX591A

S MD Type Medium Power Transistor FCX591A SOT-89 +0.1 4.50-0.1 Transistors Unit: mm +0.1 1.50-0.1 Features PNP silicon planar. +0.1 1.80-0.1 +0.1 2.50-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 +0.1 4.00-0.1 +0.1 0.80-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating -40 -40 -5 -1 -2 -200 1 -65 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type FCX591A Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages * Breakdown Voltages Collector Cut-Off Current Collector-Emitter Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-on Voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO ICES IEBO VCB=-30V VCE=-30V VEB=-4V Testconditons Min -40 -40 -5 Transistors Typ Max Unit V V V -100 -100 -100 -0.2 -0.35 -0.5 -1.1 -1.0 300 300 250 160 30 150 10 800 nA nA nA V V V IC=-100mA, IB=-1mA VCE(sat) IC=-500mA, IB=-20mA IC=-1A, IB=-100mA VBE(sat) IC=-1A, IB=-50mA VBE(on) IC=-1A, VCE=-5V IC=-1mA, IC=-100mA*, Static Forward Current Transfer Ratio hFE IC=-500mA*, VCE=-5V IC=-1A*, IC=-2A*, Transitional frequency Output capacitance * Pulse test: tp = 300 ìs; d 0.02. fT Cobo IC=-50mA, VCE=-10V,f=100MHz VCB=-10V, f=1MHz MHz pF Marking Marking P2 2 www.kexin.com.cn