FCX617

S MD Type Switching Transistor FCX617 SOT-89 Transistors Unit: mm +0.1 1.50-0.1 Features 2W power dissipation. 12A peak pulse current. Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. Extremely low equivalent on-resistance. RCE(sat) 50mÙ at 3A. +0.1 0.48-0.1 +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 4.00-0.1 +0.1 0.80-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating 15 15 5 3 12 500 1 -55 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type FCX617 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=10V VCE=10V VEB=4V Testconditons Transistors Min 15 15 5 Typ Max Unit V V V 0.3 0.3 0.3 8 70 150 --------0.89 0.82 200 300 200 150 ----80 415 450 320 240 80 120 30 120 160 100 100 100 14 100 230 300 400 1.0 1.0 nA nA nA Collector-emitter saturation voltage * IC=0.1A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=3A, IB=50mA IC=4A, IB=50mA IC=5A, IB=50mA VBE(sat) IC=3A, IB=50mA VBE(on) IC=3A, VCE=2V IC=10mA, VCE=2V IC=200mA,VCE=2V IC=3A,VCE=2V IC=5A,VCE=2V IC=12A,VCE=2V IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=3A, VCC=10V IB1=IB2=50mA mV Base-emitter saturation voltage * Base-emitter ON voltage * V V Static Forward Current Transfer Ratio* hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz 40 pF ns ns Marking Marking 617 2 www.kexin.com.cn