FCX619

S MD Type Transistors NPN Silicon Power Switching Transistor FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE(sat) 87mÙ at 2.75A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 50 50 5 6 3.0 500 1.5 -55 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type FCX619 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Collector Emitter Cut-Off Current Emitter cut-off current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=40V VCE=40V VEB=4V Testconditons Transistors Min 50 50 5 Typ 190 65 8.3 Max Unit V V V 100 100 100 13 150 190 240 0.97 0.89 200 300 200 100 ----100 400 450 400 200 30 165 12 170 750 20 25 220 260 320 1.1 1.0 nA nA nA Collector-emitter saturation voltage * IC=0.1A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=2A, IB=50mA IC=2.75A, IB=100mA VBE(sat) IC=2.75A, IB=100mA VBE(on) IC=2.75A, VCE=2V IC=10mA, VCE=2V IC=200mA,VCE=2V IC=1A,VCE=2V IC=2A,VCE=2V IC=6A,VCE=2V IC=50mA, VCE=10V, f=100MHz VCB=10V, f=1MHz IC=1A, VCC=10V IB1=IB2=10mA mV Base-emitter saturation voltage * Base-emitter ON voltage * V V DC current gain * hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking 619 2 www.kexin.com.cn