FCX658A

S MD Type NPN Silicon Planar Medium Power High Voltage Transistor FCX658A Transistors Features 400 Volt VCEO 0.5 Amp continuous current Ptot=1 Watt Optimised hfe characterised upto 200mA Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 derate above 25 Operating and Storage Temperature Range Tj:Tstg Symbol VCBO VCEO VEBO ICM IC Ptot Rating 400 400 5 1 500 1 5.7 -55 to +150 Unit V V V A mA W mW/ www.kexin.com.cn 1 SMD Type FCX658A Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO V(BR)CEO) V(BR)EBO ICBO ICES IEBO IC=100ìA IC=10mA* IE=100ìA VCB=320V VCE=320V VEB=4V IC=20mA, IB=1mA Collector-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA* IC=100mA, IB=10mA* Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage VBE(sat) VBE(on) IC=100mA,IB=10mA* IC=100mA, VCE=5V* IC=1mA, VCE=5V* Static Forward Current Transfer Ratio hFE IC=10mA, VCE=10V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* Transition Frequency Output Capacitance Switching times fT Cobo ton toff IC=20mA, VCE=20V,f=20MHz VCB=20V, f=1MHz IC=100mA, VC=100V IB1=10mA,IB2=-20mA 2% 85 100 55 35 50 Testconditons Min 400 400 5 Transistors Typ 480 465 7.8 Max Unit V V V 100 100 100 0.165 0.125 0.2 0.75 0.70 150 170 130 90 0.85 0.85 nA nA nA V V V MHz 10 130 3300 pF ns ns * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle Marking Marking 65A 2 www.kexin.com.cn