FCX717

S MD Type Transistors PNP Silicon Power Switching Transistor FCX717 Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE(sat) 77mÙ at 3A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -12 -12 -5 -10 -3 -500 1 -55 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type FCX717 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Collector Emitter Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO ICES IEBO VCB=-10V VCE=-10V VEB=-4V Testconditons Transistors Min -12 -12 -5 Typ -35 -25 -8.5 Max Unit V V V -100 -100 -100 -12 -110 -230 -0.85 300 300 160 60 45 80 475 450 240 100 70 110 21 70 130 30 -20 -150 -320 nA nA nA mV V V IC=-0.1A, IB=-10mA VCE(sat) IC=-1A, IB=-10mA IC=-3A, IB=-50mA VBE(sat) IC=-3A, IB=-50mA VBE(on) IC=-3A, VCE=-2V IC=-10mA,VCE=-2V IC=-0.1A,VCE=-2V IC=-3A,VCE=-2V IC=-8A,VCE=-2V IC=-10A,VCE=-2V IC=-50mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz IC=-2A, VCC=-6V IB1=IB2=50mA -0.92 -1.05 -1.0 Static Forward Current Transfer Ratio * hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking 717 2 www.kexin.com.cn