FCX718

S MD Type Transistors PNP Silicon Power Switching Transistor FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE(sat) 96mÙ at 2.5A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -20 -20 -5 -6 -2.5 -500 1 -55 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type FCX718 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO ICES IEBO VCB=-10V VCE=-10V VEB=-4V Testconditons Transistors Min -20 -20 -5 Typ -65 -55 -8.8 Max Unit V V V -100 -100 -100 -12 -110 -230 -40 -200 -220 -300 -1.1 nA nA nA Collector-emitter saturation voltage * IC=-0.1A, IB=-10mA VCE(sat) IC=-1A, IB=-20mA IC=-1.5A, IB=-50mA IC=-2.5A, IB=-200mA VBE(sat) IC=-3A, IB=-50mA VBE(on) IC=-3A, VCE=-2V IC=-10mA,VCE=-2V IC=-0.1A,VCE=-2V IC=-2A,VCE=-2V IC=-4A,VCE=-2V IC=-6A,VCE=-2V IC=-50mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz IC=-0.75A, VCC=-15V IB1=IB2=15mA 300 300 150 35 15 150 mV Base-emitter saturation voltage * Base-emitter ON voltage * -0.98 V V -0.85 -0.95 475 450 230 70 30 180 21 40 670 30 Static Forward Current Transfer Ratio* hFE Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking 718 2 www.kexin.com.cn