FCX789A

S MD Type Transistors PNP Silicon Power Switching Transistor FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -25 -25 -5 -8 -3 1 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type FCX789A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-10V VEB=-4V Testconditons Transistors Min -25 -25 -5 Typ Max Unit V V V 0.1 0.1 -190 -400 -320 -0.9 -0.8 300 230 180 75 100 225 25 35 400 800 ìA ìA mV V V IC=-1A, IB=-10mA VCE(sat) IC=-2A, IB=-20mA IC=-3A, IB=-100mA VBE(sat) IC=-1A, IB=-10mA VBE(on) IC=-1A, VCE=-2V IC=-10mA,VCE=-2V IC=-1A,VCE=-2V IC=-2A,VCE=-2V IC=-6A,VCE=-2V IC=-50mA, VCE=-5V, f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA Static Forward Current Transfer Ratio * hFE Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cibo Cobo t(on) t(off) MHz pF pF ns ns Marking Marking 789 2 www.kexin.com.cn