FCX790A

S MD Type Transistors PNP Silicon Power Switching Transistor FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -50 -40 -5 -6 -2 1 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type FCX790A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector-base cut-off current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-10V VEB=-4V Testconditons Transistors Min -50 -40 -5 Typ Max Unit V V V 0.1 0.1 -250 -350 -450 -0.9 -0.8 300 250 200 150 100 225 24 35 600 800 ìA ìA mV V V IC=-0.5A, IB=-5mA VCE(sat) IC=-1A, IB=-10mA IC=-2A, IB=-50mA VBE(sat) IC=-1A, IB=-10mA VBE(on) IC=-1A, VCE=-2V IC=-10mA,VCE=-2V IC=-500mA,VCE=-2V IC=-1A,VCE=-2V IC=-2A,VCE=-2V IC=-50mA, VCE=-5V, f=50MHz VEB=0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA Static Forward Current Transfer Ratio * hFE Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cibo Cobo t(on) t(off) MHz pF pF ns ns Marking Marking 790 2 www.kexin.com.cn