FDB15N50

S MD Type MOSFET N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness +0.2 8.7-0.2 +0.1 1.27-0.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current TC=25 Symbol VDSS VGSS ID Idp PD RèJA Tch Tstg Rating 500 30 15 60 300 2 62 175 -55 to +175 Unit V V A A W W/ /W Drain current-pulsed Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Channel temperature Storage temperature 5.60 1 Gate 2 Drain 3 Source Reduced rDS(ON) www.kexin.com.cn 1 SMD Type MOSFET KDB15N50(FDB15N50) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Forward Transconductance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Turn-on delay time Rise time Turn-off delay time Fall time Reverse Recovery Time Reverse Recovered Charge Continuous Source Current Pulsed Source Current1 Symbol VDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss gfs Qg(TOT) Qgs Qgd ton tr toff tf trr QRR IS ISM ISD = 15A, diSD/dt = 100A/ìs ISD = 15A, diSD/dt = 100A/ìs ID=15A,RG=6.2 ,VDD=250V,RD=17Ù VDD = 10V, ID = 7.5A VGS = 10V, VDS = 400V, ID = 15A 10 33 7.2 12 9 5.4 26 5 470 5 730 6.6 15 60 41 10 16 VDS=25V,VGS=0,f=1MHZ ID=250ìA Testconditons VGS=0V Min 500 25 100 2.0 3.4 0.33 1850 230 16 4.0 0.38 Typ Max Unit V A nA V Ù pF pF pF S nC nC nC ns ns ns ns ns ìC A A VDS=500V,VGS=0,TC=25 VGS= 30V VDS = VGS, ID = 250ìA VGS=10V,ID=7.5A 2 www.kexin.com.cn