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FDB2552

FDB2552

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    FDB2552 - N-Channel PowerTrench MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
FDB2552 数据手册
S MD Type MOSFET N-Channel PowerTrench MOSFET KDB2552(FDB2552) Features rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A +0.1 1.27-0.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Qg(tot) = 39nC (Typ.), VGS = 10V Low Miller Charge +0.2 8.7-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Channel temperature Storage temperature RèJA Tch Tstg PD Symbol VDSS VGSS ID Rating 150 20 37 5 150 1.0 43 175 -55 to +175 Unit V V A A W W/ /W 5.60 1 Gate 2 Drain 3 Source Low QRR Body Diode www.kexin.com.cn 1 SMD Type MOSFET KDB2552(FDB2552) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Symbol VDSS IDSS IGSS VGS(th) ID=250ìA Testconditons VGS=0V Min 150 1 250 100 2.0 4.0 0.032 0.036 0.036 0.054 0.084 0.097 2800 VDS=25V,VGS=0,f=1MHZ 285 55 VGS = 0V to 10V VGS = 0V to 2V VDS = 75V, Ig=1.0mA ID = 16A 39 5.2 13.5 8.4 8.3 62 12 VDD = 75V, ID = 16A VGS = 10V, RGS = 8.2 29 36 29 97 ISD = 16A, diSD/dt = 100A/ìs ISD = 16A, diSD/dt = 100A/ìs ISD = 16A ISD = 8A 90 242 1.25 1.0 51 6.8 pF pF pF nC nC nC nC nC ns ns ns ns ns ns ns nC V V Ù Typ Max Unit V A nA V VDS=120V,VGS=0 VDS=120V,VGS=0,TC=150 VGS= 20V VDS = VGS, ID = 250ìA VGS=10V,ID=16A Drain to source on-state resistance RDS(on) VGS=6V,ID=8A VGS=10V,ID=16A,TC=175 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Reverse Recovery Time Reverse Recovered Charge Source to Drain Diode Voltage Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Qgs2 Qgd tON td(ON) tr td(OFF) tf tOFF trr QRR VSD 2 www.kexin.com.cn
FDB2552 价格&库存

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