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FDB3632

FDB3632

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    FDB3632 - N-Channel PowerTrench MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
FDB3632 数据手册
S MD Type MOSFET N-Channel PowerTrench MOSFET KDB3632(FDB3632) TO-263 +0.1 1.27-0.1 Features rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 5.28-0.2 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 Low QRR Body Diode +0.2 8.7-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC 111 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature RèJA RèJC Tch Tstg PD Symbol VDSS VGSS ID Rating 100 20 80 12 310 2.07 43 0.48 175 -55 to +175 Unit V V A A W W/ /W /W 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type MOSFET KDB3632(FDB3632) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Symbol VDSS IDSS IGSS VGS(th) ID=250ìA Testconditons VGS=0V Min 100 1 250 100 2.0 4.0 0.0075 0.009 0.009 0.015 0.018 0.022 6000 VDS=25V,VGS=0,f=1MHZ 820 200 VGS = 0V to 10V VGS = 0V to 2V 84 11 30 VDS = 50 V, ID = 80A,Ig=1.0mA 20 20 102 30 VDD = 50 V, ID = 80A, VGS = 10 V, RGEN = 3.6 39 96 46 213 ISD=80A ISD=40A ISD = 75A, dISD/dt =100A/ìs ISD = 75A, dISD/dt =100A/ìs 1.25 1.0 64 120 110 14 pF pF pF nC nC nC nC nC ns ns ns ns ns ns V V ns nC Ù Typ Max Unit V A A nA V VDS=80V,VGS=0 VDS=80V,VGS=0,TC=150 VGS= 20V VDS = VGS, ID = 250ìA VGS=10V,ID=80A Drain to source on-state resistance RDS(on) VGS=6V,ID=40A VGS=10V,ID=80A,TC=175 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Qgs2 Qgd tON td(ON) tr td(OFF) tf tOFF VSD trr QRR 2 www.kexin.com.cn
FDB3632 价格&库存

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