FDB4020P

S MD Type MOSFET P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P(FDB4020P) TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. +0.2 8.7-0.2 Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current TC=25 Symbol VDSS VGSS ID Idp PD RèJC RèJA Tch Tstg Rating -20 8 -16 -48 37.5 0.25 4 40 175 -55 to +175 Unit V V A A W W/ /W /W Drain current-pulsed Power dissipation Derate above 25 Thermal Resistance, Junction-to- Case Thermal Resistance Junction to Ambient Channel temperature Storage temperature 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type MOSFET KDB4020P(FDB4020P) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Symbol VDSS IDSS IGSS VGS(th) ID=250ìA Testconditons VGS=0V Min -20 -1 100 -0.4 -0.58 0.068 0.098 -1 0.08 0.13 Ù Typ Max Unit V A nA V VDS=-16V,VGS=0,TC=25 VGS= 8V,VGS=0V VDS = VGS, ID = -250ìA VGS=-4.5V,ID=-8A Drain to source on-state resistance RDS(on) VGS=-4.5V,ID=-8A,TJ=125 VGS=-2.5V,ID=-7A 0.096 0.110 -20 14 665 A S pF pF pF 13 nC nC nC 16 38 80 45 -16 -48 ns ns ns ns A A V On-State Drain Current Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on delay time Rise time Turn-off delay time Fall time Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage * Pulse Test: Pulse Width ID(on) gFS Ciss Coss Crss Qg Qgs Qgd ton tr toff tf IS ISM VSD VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -8 A VDS=-10V,VGS=0,f=1MHZ 270 70 VDS = -5 V, ID = -16 A, VGS = -4.5 V * 9.5 1.3 2.2 8 VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ù* 24 50 29 VGS = 0 V, IS = -16 A * 2.0% -1.2 300 ìs, Duty Cycle 2 www.kexin.com.cn