FDC2512-HF

MOSFET SMD Type N-Channel Enhancement MOSFET FDC2512-HF ( SOT-23-6 ) 8QLW PP +0.1 0.4 -0.1 Ƶ Features 6 5 4 1 2 3  ƽ VDS (V) = 150V ƽ RDS(ON) ˘ 475m¡ (VGS = 6V)   1.6  ƽ RDS(ON) ˘ 425m¡ (VGS = 10V)  2.8  ƽ ID = 1.4A (VGS = 10V)    +0.01 -0.01 D D   D G   S +0.2 -0.1          D Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Symbol Rating Drain-Source Voltage VDS 150 Gate-Source Voltage VGS f20 Drain Current - Continuous *1a - Pulsed Power Dissipation *1a *1b ID PD 1.4 8 1.6 0.8 Thermal Resistance.Junction- to-Ambient *1a R thJA 78 Thermal Resistance.Junction- to-Case *1 RthJC 30 TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature Range Unit V A W ć/W ć *1. RșJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rș JC is guaranteed by design while Rș CA is determined by the user's board design. *1a. 78°C/W when mounted on a 1in2 pad of 2 oz copper *1b.156°C/W when mounted on a minimum pad of 2 oz copper www.kexin.com.cn 1 MOSFET SMD Type N-Channel Enhancement MOSFET FDC2512-HF Ƶ Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Voltage Symbol Test Conditions Min Max 150 Unit V VDSS ID=250­A, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=120V, VGS=0V 1 ­A Gate-Body Leakage Current IGSSF VDS=0V, VGS=f20V f100 nA Gate Threshold Voltage *1 VGS(th) VDS=VGS , ID=250­A V 2 VGS=10V, ID=1.4A Static Drain-Source On-Resistance *1 RDS(On) VGS=10V, ID=1.4A TJ=125ć VGS=6.0V, ID=1.3A On State Drain Current *1 Forward Transconductance *1 ID(ON) VGS=10V, VDS=5V gFS VDS=10V, ID=1.4A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 2.6 4 319 425 624 875 332 475 4 S 344 VGS=0V, VDS=75V, f=1MHz pF 22 9 8 VGS=10V, VDS=75V, ID=1.4A *1 11 nC 1.5 Qgs Gate Drain Charge Qgd 2.3 Turn-On DelayTime td(on) 6.5 13 Turn-On Rise Time tr 3.5 7 Turn-Off DelayTime td(off) 22 33 8 VGS=10V, VDS=75V, ID=1A,RGEN=6¡ *1 Turn-Off Fall Time tf 4 Body Diode Reverse Recovery Time trr 45.8 Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS VSD *1 Pulse Test: Pulse Width < 300ȝs, Duty Cycle < 2.0% Ƶ Marking Marking FDC2512 www.kexin.com.cn m¡ A 4 Gate Source Charge Diode Forward Voltage *1 2 Typ IF= 1.4A, dI/dt= 300A/­s *1 IS=1.3A,VGS=0V 119 0.8 ns nC 1.3 A 1.2 V MOSFET SMD Type N-Channel Enhancement MOSFET FDC2512-HF  Ƶ Typical Characterisitics  9 *6  9 9 9 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE  9   9 *6  9  9      9 9         Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.   ID = 1.4A VGS =10V RDS(ON), ON-RESISTANCE (OHM) ID = 0.7A        ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V)   TA = 125oC    7 $   R &             o TJ, JUNCTION TEMPERATURE ( C)       Figure 4. On-Resistance Variation with Gate-to-Source Voltage.   IS, REVERSE DRAIN CURRENT (A) 25RC TA = -55RC R 125 C      VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. VDS = 25V ID, DRAIN CURRENT (A) 9   RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE  VGS = 0V  TA = 125RC  25R C -55R C        VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics.         VSD, BODY DIODE FORWARD VOLTAGE (V)   Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.  www.kexin.com.cn 3 MOSFET SMD Type N-Channel Enhancement MOSFET FDC2512-HF Ƶ Typical Characterisitics  ID = 1.4A VDS = 50V f = 1MHz VGS = 0 V 9   9 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V)     & ,66    & 566             Qg , GATE CHARGE (nC)    P(pk), PEAK TRANSIENT POWER (W)  嘕V PV  PV PV  '& V VGS = 10V SINGLE PULSE RșJA = 156oC/W  TA = 25oC       SINGLE PULSE R©JA = 156°C/W TA = 25°C          t 1, TIME (sec)  Figure 9. Maximum Safe Operating Area.  Figure 10. Single Pulse Maximum Power Dissipation. .  '  R©JA(t) = r(t) + R©JA R©JA = 156°C/W   P(pk  t1       t2 TJ - TA = P * R©JA(t) Duty Cycle, D = t1 / t2 6,1*/(38/6(     t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.  4      VDS, DRAIN-SOURCE VOLTAGE (V)  Figure 8. Capacitance Characteristics.  5 '621 /,0,7  VDS, DRAIN TO SOURCE VOLTAGE (V)  r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE   Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) & 266 www.kexin.com.cn