FDC3612-HF

MOSFET SMD Type N-Channel MOSFET FDC3612-HF ( SOT-23-6 ) Unit: mm +0.1 ● VDS (V) = 100V 6 5 4 1 2 3 ● RDS(ON) ＜ 125mΩ (VGS = 10V) ● RDS(ON) ＜ 135mΩ (VGS = 6V) ● Fast switching speed 0.55 +0.2 1.6 -0.1 ● ID = 2.6 A (VGS = 10V) +0.2 2.8 -0.1 ■ Features 0.4 0.4 -0.1 +0.02 0.15 -0.02 +0.01 -0.01 2 5 3 4 0-0.1 6 +0.1 0.68 -0.1 1 +0.1 1.1 -0.1 +0.2 -0.1 1.Drain 4.Source 2.Drain 5.Drain 3.Gate 6.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 ID 2.6 Pulsed Drain Current IDM 20 Drain-Source Avalanche Current IAR 2.6 Continuous Drain Current Power Dissipation (Note.1) (Note.1) (Note.2) PD 1.6 0.8 Thermal Resistance, Junction-to-Ambient RθJA 78 Thermal Resistance, Junction-to-Case RθJC 30 TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature Range Unit V A W °C/W ℃ Note.1: 78°C/W when mounted on a 1in 2 pad of 2oz copper on FR-4 board. Note.2: 156°C/W when mounted on a minimum pad. www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET FDC3612-HF ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ VDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA Static Drain-Source On-Resistance RDS(On) 2 ID(ON) VGS=10V, VDS=5V gFS VDS=10V, ID=2.6A Input Capacitance Ciss On State Drain Current VGS=0V, VDS=50V, f=1MHz Qg 14 VGS=10V, VDS=5 0V, ID=2.6A (Note.1) Qgs Qgd 3.6 Turn-On DelayTime td(on) 6 VGS=10V, VDS=50V, ID=1A,RG=6Ω (Note.1) tf trr Drain-Source Avalanche Energy Maximum Body-Diode Continuous Current Diode Forward Voltage W DSS IF= 2.6A, dI/dt= 100A/μs Marking 2 3612 www.kexin.com.cn nC 11 3.5 7 23 37 3.7 7.4 ns 31 56 nC 90 1.3 A IS=1.3A,VGS=0V 1.2 V Note.1:Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% ■ Marking 20 Single Pulse,VDD=50V, ID=2.6A (Note.1) IS VSD pF 2.3 Gate Source Charge Qrr S 55 Gate Drain Charge Body Diode Reverse Recovery Time mΩ 660 Total Gate Charge Body Diode Reverse Recovery Charge V A 40 Turn-Off Fall Time 4 10 Crss tr nA 10 Coss td(off) ±100 135 Output Capacitance Turn-On Rise Time μA 125 Reverse Transfer Capacitance Turn-Off DelayTime 10 240 TJ=125℃ VGS=6V, ID=2.5A Forward Transconductance Unit V VGS=10V, ID=2.6A VGS=10V, ID=2.6A Max 100 Drain-Source Breakdown Voltage mJ MOSFET SMD Type N-Channel MOSFET FDC3612-HF ■ Typical Characterisitics 1.8 V GS = 10V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 20 5.0V 16 4.0V 12 8 3.5V 4 1.6 V GS = 3.5V 1.4 4.0V 4.5V 1.2 0 10V 1 2 4 6 0 8 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.26 2.2 I D = 2.6A V GS = 10V ID = 1.3A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANC E 6.0V 0.8 0 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 125 0.23 0.2 T A = 125 o C 0.17 0.14 0.11 T A = 25 o C 0.08 0.05 150 2 o TJ , JUNCTION TEMPERATURE ( C) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS , REVERSE DRAIN CURRENT (A ) 20 V DS = 5V ID, DRAIN CURRENT (A) 5.0V 16 12 T A = 125 o C 8 o 25 C 4 -55o C 2.5 3 3.5 T A = 125oC 1 25 o C 0.1 -55 o C 0.01 0.001 0.0001 0 2 V GS = 0V 10 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET FDC3612-HF ■ Typical Characterisitics 1000 I D = 2.6A V DS = 25V f = 1MHz V GS = 0 V 50V 8 800 75V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 C ISS 600 400 200 0 C OSS C RSS 0 0 3 6 9 12 15 0 20 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 60 80 100 Figure 8. Capacitance Characteristics. 100 40 100µs R DS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A ) 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 1ms 10ms 100ms 1s 10s 1 DC 0.1 VGS = 10V SINGLE PULSE RθJA = 156oC/W 0.01 TA = 25oC 0.001 0.1 1 10 100 SINGLE PULSE R θJA = 156°C/W T A = 25°C 30 20 10 0 0.001 1000 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE . 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 156 °C/W 0.2 0.1 P(pk) 0.1 t1 0.05 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 www.kexin.com.cn 100 1000