SMD S MD Type
Switching Transistors FMMT4123
SOT-23
Transistors IC
Unit: mm
Features
3
+0.1 2.9-0.1 +0.1 0.4-0.1
Switching transistors.
+0.1 2.4-0.1 +0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj,Tstg Rating 40 30 5 200 330 -55 to +150 Unit V V V mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
FMMT4123
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * DC current gain * Current-gain-bandwidth product Output capacitance Input capacitance Noise figure Small signal current transfer Delay time Rise time Storage time Fall time * Pulse test: tp 300ìs; d 0.02. Symbol V(BR)CBO IC=10ìA V(BR)CEO IC=1mA V(BR)EBO IE=10ìA ICBO IEBO VCE=20V VEB=3V Testconditons
Transistors IC
Min 40 30 5
Typ
Max
Unit V V V
50 50 0.3 0.95 50 250 4 8 6 50 200 24 13 125 11 150
nA nA V V
VCE(sat) IC=50mA, IB=5mA VBE(sat) IC=50mA, IB=5mA hFE fT Cobo Cibo NF hfe td tr ts tf IC=2mA, VCE=1V IC=10mA, VCE=20V f=100MHz VCB=5V, IE=0, f=140KHz VBE=0.5V, IC=0, f=140KHz VCE=5V IC=200ìA,Rg=2kÙ f=30Hz to 15KHz at-3dB points IC=2mA, VCE=1V, f=1KHz VCC=3V, IC=10mA,IB1=1mA VBE(off)=0.5V VCC=3V, IC=10mA IB1= IB2=1mA
MHz pF pF dB
ns ns ns ns
Marking
Marking ZB
2
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