FMMT417

S MD Type Avalanche Transistor FMMT417 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High speed pulse generators SOT23 NPN Silicon Planar +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating 320 100 6 60 500 330 -55 to +150 Unit V V V A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Current in second breakdown Static Forward Current Transfer Ratio Transition frequency Collector-base capacitance * Pulse test: tp = 300 ìs; d 0.02. Symbol V(BR)CBO IC=1mA V(BR)CEO IC=100ìA V(BR)EBO IE=10ìA ICBO IEBO VCB=80V VCB=80V, Tamb=100 VEB=4V Testconditons Min 320 100 6 0.1 10 0.1 0.5 0.9 15 25 25 40 8 MHz pF Typ Max Unit V V V ìA ìA ìA V V A A VCE(sat) IC=10mA,IB=1mA VBE(sat) IC=10mA,IB=1mA ISB hFE fT Ccb VC=200V, CCE=620pF VC=250V, CCE=620pF IC=10mA,VCE=10V * IC=10mA,VCE=20V,f=20MHz VCB=20V, IE=0, f=1MHz Marking Marking 417 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1