FMMT449

SMD S MD Type Medium Power Transistor FMMT449 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 50 30 5 2 1 200 500 -55 to +125 Unit V V V A A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=1mA,IE=0 V(BR)CEO IC=10mA,IB=0 V(BR)EBO IE=100ìA,IC=0 ICBO IEBO VCE(sat) VCB=40V,IE=0 VCB=40V,TamB=100 VEB=4V,IC=0 IC=1A,IB=100mA IC=2A,IB=200mA Testconditons Min 50 30 5 0.1 10 0.1 0.5 1.0 1.25 1.0 70 100 80 40 150 15 MHz pF 300 Typ Max Unit V V V ìA ìA ìA V V V VBE(sat) IC=1A,IB=100mA VBE(ON) IC=1A,VCE=2V IC=50mA, VCE=2V* Static Forward Current Transfer Ratio hFE IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* Current-gain-bandwidth product Output capacitance * Pulse width=300ìs. Duty cycle 2% fT Cobo IC=50mA,VCE=10V,f=100MHz VCB=10V,f=1MHz Marking Marking 449 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1