FMMT451

SMD S MD Type High Perfromance Transistor FMMT451 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low equivalent on-resistance. 1 Amp continuous current. Ptot = 500mW. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 80 60 5 2 1 200 500 -55 to +150 Unit V V V A A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Static Forward Current Transfer Ratio * Current-gain-bandwidth product Output capacitance * Pulse test: tp 300 ìs; d 0.02. Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO IEBO VCB=60V VEB=4V Testconditons Min 80 60 5 0.1 0.1 0.35 1.1 10 50 150 15 150 MHz pF Typ Max Unit V V V ìA ìA V V VCE(sat) IC=150mA,IB=15mA VBE(sat) IC=150mA,IB=15mA hFE fT Cobo IC=1A, VCE=10V IC=150mA,VCE=10V IC=50mA,VCE=10V,f=100MHz VCB=10V,f=1MHz Marking Marking 451 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1