S MD Type
High Performance Transistor FMMT455
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
140 Volt VCEO 1 Amp continuous current Ptot = 500 mW
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 160 140 5 2 1 200 500 -55 to +150 Unit V V V A A mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter sustaining voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Static Forward Current Transfer Ratio Transition frequency Output capacitance * Pulse test: tp = 300 ìs; d 0.02. Symbol V(BR)CBO IC=100ìA VCEO(sus) IC=10mA V(BR)EBO IE=100ìA ICBO IEBO VCB=140V VEB=4V Testconditons Min 160 140 5 0.1 0.1 0.7 100 10 100 15 MHz pF 300 Typ Max Unit V V V ìA ìA V
VCE(sat) IC=150mA,IB=15mA hFE fT Cobo IC=150mA,VCE=10V * IC=1A, VCE=10V* IC=50mA,VCE=10V,f=100MHz VCB=10V, IE=0, f=1MHz
Marking
Marking 455
+0.1 0.38-0.1
0-0.1
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