FMMT459

S MD Type Transistors Silicon NPN High Voltage Switching Transistor FMMT459 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low saturation voltage - 90mV @ 50mA hFE 50 @ 30 Ma 0.55 6V reverse blocking capability +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 IC=150mA continuous +0.1 0.38-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Emitter-collector voltage Peak pulse current Continuous collector current * 1 Base current Power dissipation @ TA=25 * 1 Linear derating factor Power dissipation @ TA=25 *2 Linear derating factor Operating and storage temperature range ?Junction to ambient *1 Junction to ambient *2 Tj:Tstg RèJA RèJA PD Symbol VCBO VCEV VCEO VEBO VECV ICM IC IB PD Rating 500 500 450 6 6 0.5 0.15 0.2 625 5 806 6.4 -55 to +150 200 155 /W /W A mW mW/ mW mW/ Unit V V V V V A *1 For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions *2 as above measured at t