S MD Type
Medium Power Transistor FMMT493
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
Medium power transistor.
1
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Features
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 120 100 5 2 1 200 500 -55 to +150 Unit V V V A A mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
FMMT493
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector cutoff current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO IEBO ICES VCB=100V VEB=4V VCB=100V Testconditons
Transistors
Min 120 100 5
Typ
Max
Unit V V V
100 100 100 0.3 0.6 1.15 1.0 100 100 60 20 150 10 300
nA nA nA V V V
IC=500mA,IB=50mA VCE(sat) IC=1A,IB=100mA VBE(sat) IC=1A,IB=100mA VBE(ON) IC=1A,VCE=10V IC=1mA, VCE=10V*
Static Forward Current Transfer Ratio
hFE
IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V*
Transition Frequency Collector-Base Breakdown Voltage * Pulse test: tp 300 ìs; d 0.02.
fT Cobo
IC=50mA,VCE=10V,f=100MHz VCB=10V,f=1MHz
MHz pF
Marking
Marking 493
2
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