FMMT495

S MD Type Power High Performance Transistor FMMT495 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 SOT23 NPN silicon planar medium 0.55 Features +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 170 150 5 2 1 200 500 -55 to +150 Unit V V V A A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT495 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Currents Collector Cut-Off Currents Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=150V VCE=150V VEB=4V Testconditons Transistors Min 170 150 5 Typ Max Unit V V V 100 100 100 0.2 0.3 1.0 1.0 100 100 50 10 100 10 300 nA nA nA V V V IC=250mA,IB=25mA VCE(sat) IC=500mA,IB=50mA VBE(sat) IC=500mA,IB=50mA VBE(ON) IC=500mA,VCE=10V IC=1mA, VCE=10V Static Forward Current Transfer Ratio hFE IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* Transition Frequency Collector-Base Breakdown Voltage * Pulse test: tp = 300 ìs; d 0.02. fT Cobo IC=50mA,VCE=10V,f=100MHz VCB=10V,f=1MHz MHz pF Marking Marking 495 2 www.kexin.com.cn