FMMT497

S MD Type Transistors High Voltage High Performance Transistor FMMT497 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 SOT23 NPN silicon planar +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating 300 300 5 500 1 200 500 -55 to +150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector Cut-Off Current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCE(sat) VCB=250V VCE=250V VEB=4V IC=100mA,IB=10mA IC=250mA,IB=25mA Testconditons Min 300 300 5 100 100 100 0.2 0.3 1.0 1.0 100 80 20 75 5 MHz pF 300 Typ Max Unit V V V nA nA nA V V V VBE(sat) IC=250mA,IB=25mA VBE(ON) IC=250mA,VCE=10V IC=1mA, VCE=10V Static Forward Current Transfer Ratio hFE IC=100mA, VCE=10V* IC=250mA, VCE=10V* Transition Frequency Collector-Base Breakdown Voltage * Pulse test: tp = 300 ìs; d 0.02. fT Cobo IC=50mA,VCE=10V,f=100MHz VCB=10V,f=1MHz Marking Marking 497 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1