FMMT551

SMD S MD Type Medium Power Transistor FMMT551 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features 60 Volt VCEO. 1 Amp continuous current. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -80 -60 -5 -2 -1 -200 500 -55 to +200 Unit V V V A A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Static Forward CurrentTransfer Ratio * Current-gain-bandwidth product Output capacitance * Pulse test: tp 300 ìs; d 0.02. Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-60V VEB=-4V Testconditons Min -80 -60 -5 0.1 0.1 -0.35 -1.1 50 10 150 25 MHz pF 150 Typ Max Unit V V V ìA ìA V V VCE(sat) IC=-150mA,IB=-15mA VBE(sat) IC=-150mA,IB=-15mA hFE fT Cobo IC=-150mA,VCE=-10V IC=-1A, VCE=-10V IC=-50mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz Marking Marking 551 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1