FMMT555

S MD Type Medium Power Transistor FMMT555 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 150 Volt VCEO 1 Amp continuous current 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -160 -150 -5 -2 -1 -200 500 -55 to +150 Unit V V V A A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-on Voltage * Static Forward Current Transfer Ratio Transition Frequency Output capacitance * Pulse test: tp = 300 ìs; d 0.02. Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-140V VCB=-140V, Ta = 100 VEB=-4V Testconditons Min -160 -150 -5 -0.1 -10 -0.1 -0.3 -1 -1 50 50 100 10 MHz pF 300 Typ Max Unit V V V ìA ìA ìA V V V VCE(sat) IC=-100mA, IB=-10mA VBE(sat) IC=-100mA, IB=-10mA VBE(ON) IC=-100mA,VCE=-10V hFE fT Cobo IC=-10mA, VCE=-10V IC=-300mA, VCE=-10V IC=-50mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz Marking Marking 555 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1