FMMT589

SMD S MD Type Power High Performance Transistor FMMT589 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low equivalent on-resistance. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -50 -30 -5 -2 -1 -200 500 -55 to +150 Unit V V V A A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-30V VEB=-4V Testconditons Min -50 -30 -5 -100 -100 -0.35 -1.2 -1.1 100 100 80 40 100 15 MHz pF 300 Typ Max Unit V V V nA nA V V V VCE(sat) IC=-1A,IB=-100mA VBE(sat) IC=-1A,IB=-100mA VBE(ON) IC=-1A,VCE=-2V IC=-1mA, VCE=-2V* Static Forward Current TransferRatio hFE IC=-500mA,VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* Current-gain-bandwidth product Output capacitance * Pulse test: tp 300 ìs; d 0.02. fT Cobo IC=-100mA,VCE=-5V,f=100MHz VCB=-10V,f=1MHz Marking Marking 589 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1