FMMT593

S MD Type High Voltage Transistor FMMT593 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features SOT23 PNP silicon planar +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -120 -100 -5 -2 -1 -200 500 -55 to +150 Unit V V V A A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT593 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector-Emitter Cut-Off Current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO ICES IEBO VCE(sat) VCB=-100V VCE=-100V VEB=-4V IC=-250mA, IB=-25mA IC=-500mA, IB=-50mA VBE(sat) IC=-500mA, IB=-50mA VBE(ON) IC=-1mA,VCE=-5V IC=-1mA, VCE=-5V Static Forward Current Transfer Ratio hFE IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V, Current-gain-bandwidth product Output capacitance * Pulse test: tp = 300 ìs; d 0.02. fT Cobo IC=-50mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz Testconditons Transistors Min -120 -100 -5 Typ Max Unit V V V -100 -100 -100 -0.2 -0.3 -1.1 -1.0 100 100 100 50 50 5 300 nA nA nA V V V V MHz pF Marking Marking 593 2 www.kexin.com.cn