FMMT614

S MD Type Power Darlington Transistor FMMT614 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features hFE up to 5k at IC= 500mA Fast switching Low VCE(sat) at High IC +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 120 100 10 500 2 500 -55 to +150 Unit V V V mA A mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT614 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * DC current gain * Output capacitance Switching times * Pulse test: tp = 300 ìs; d 0.02. Symbol V(BR)CBO IC=10ìA V(BR)CEO IC=10mA V(BR)EBO IE=10ìA ICBO ICES IEBO VCB=100V,IE=0 VCE=100V,IE=0 VEB=8V 0.9 0.78 1.7 1.5 15K 5K 6 0.7 2.5 Testconditons Min 120 100 10 Typ 300 130 10 0.02 Transistors Max Unit V V V 10 10 100 1.0 0.9 1.9 1.8 nA ìA nA V V V IC=500mA,IB=5mA VCE(sat) IC=100mA,IB=0.1mA VBE(sat) IC=500mA,IB=5mA VBE(ON) IC=500mA,VCE=5V hFE Cobo ton toff IC=100mA,VCE=5V IC=500mA,VCE=5V VCB=10V,f=100MHz IC=100ìA, VS=10V IB=0.1mA pF ìs ìs Marking Marking 614 2 www.kexin.com.cn