FMMT718

SMD S MD Type Switching Transistor FMMT718 SOT-23 Transistors IC Unit: mm Features 625mW power dissipation. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 IC up to 10A peak pulse current. 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 IC CONT 2.5A. Excellent hfe characteristics up to 10A (pulsed). Extremely low saturation voltage e.g. 10mV typ.. Exhibits extremely low equivalent on-resistance; RCE(sat) . 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -20 -20 -5 -6 -1.5 -500 625 -55 to +150 Unit V V V A A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT718 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-15V VEB=-4V Testconditons Transistors IC Min -20 -20 -5 Typ -65 -55 -8.8 Max Unit V V V -100 -100 -16 -130 -145 -0.87 -0.81 300 300 150 35 15 150 475 450 230 70 30 180 21 40 670 30 -40 -200 -220 -1 -1 nA nA mV V V IC=-0.1A, IB=-10mA VCE(sat) IC=-1A, IB=-10mA IC=-1.5A, IB=-50mA VBE(sat) IC=-1.5A,IB=-50mA VBE(ON) IC=-2A,VCE=-2V IC=-10mA, VCE=-2V IC=-0.1A, VCE=-2V IC=-2A, VCE=-2V IC=-4A, VCE=-2V IC=-6A, VCE=-2V IC=-50mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz VCC=-10V, IC=-1A IB1=-IB2=-20mA DC current gain * hFE Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time * Pulse test: tp 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking 718 2 www.kexin.com.cn