FMMT722

SMD S MD Type Switching Transistor FMMT722 SOT-23 Transistors IC Unit: mm Features 625mW power dissipation. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 IC up to 10A peak pulse current. Excellent hfe characteristics up to 10A (pulsed). Extremely low saturation voltage e.g. 10mV typ.. Exhibits extremely low equivalent on-resistance; RCE(sat) . +0.1 1.3-0.1 IC CONT 2.5A. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -70 -70 -5 -3 -1.5 -500 625 -55 to +150 Unit V V V A A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT722 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-60V VEB=-4V Testconditons Transistors IC Min -70 -70 -5 Typ -150 -125 -8.8 Max Unit V V V -100 -100 -35 -135 -140 -175 0.94 -0.78 300 300 175 40 150 470 450 275 60 200 14 40 700 20 -50 -200 -220 -260 -1.05 -1.0 nA nA Collector-emitter saturation voltage * IC=-0.1A, IB=-10mA IC=-0.5A, IB=-20mA VCE(sat) IC=-1A, IB=-100mA IC=-1.5A, IB=-200mA VBE(sat) IC=-1.5A,IB=-200mA VBE(ON) IC=-1.5A,VCE=-5V IC=-10mA, VCE=-5V IC=-0.1A, VCE=-5V IC=-1A, VCE=-5V IC=-1.5A, VCE=-5V IC=-50mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz VCC=-50V, IC=-0.5A IB1=-IB2=-50mA mV Base-emitter saturation voltage * Base-emitter voltage * V V DC current gain * hFE Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time * Pulse test: tp 300ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking 722 2 www.kexin.com.cn