FMMT723

S MD Type Switching Transistor FMMT723 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 IC CONT 2.5A IC Up To 10A peak pulse current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat) +0.1 0.38-0.1 +0.1 1.3-0.1 625mW power dissipation 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating -100 -100 -5 -1 -2.5 -500 625 -55 to +150 Unit V V V A A mA mW 0-0.1 www.kexin.com.cn 1 SMD Type FMMT723 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO ICES VCB=-80V VEB=-4V VCES=-80V Testconditons Transistors Min -100 -100 -5 Typ -200 -160 -8.8 Max Unit V V V -100 -100 -100 -50 -125 -210 -0.89 -0.71 300 300 250 475 450 375 250 30 150 13 50 760 200 20 -80 -200 -330 -1.0 -1.0 nA nA nA mV V V IC=-0.1A, IB=-10mA VCE(sat) IC=-0.5A, IB=-50mA IC=-1A, IB=-150mA VBE(sat) IC=-1A,IB=-150mA VBE(ON) IC=-1A,VCE=-10V IC=-10mA, VCE=-10V IC=-0.1A, VCE=-10V Static Forward Current Transfer Ratio * hFE IC=-0.5A, VCE=-10V IC=-1A, VCE=-10V IC=-1.5A, VCE=-10V Current-gain-bandwidth product Output capacitance Switching times * Pulse test: tp = 300 ìs; d 0.02. fT Cobo ton toff IC=-50mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz IC=-0.5A, VCC=-50V IB1=IB2=-50mA MHz pF ns ns Marking Marking 723 2 www.kexin.com.cn