FMMT734

S MD Type Power Darlington Transistor FMMT734 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Very high hFE at high current (5A) Extremely low VCE(sat) at high current (1A) +0.1 1.3-0.1 625mW Power Dissipation 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating -100 -100 -12 -800 -5 625 -55 to +150 Unit V V V mA A mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT734 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector cutoff current Emitter cut-off current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-5mA V(BR)EBO IE=-100ìA ICBO ICEO IEBO VCB=-80V VCE=-80V VEB=-7V IC=-100mA, IB=-1mA IC=-250mA, IB=-1mA Collector-emitter saturation voltage * VCE(sat) IC=-500mA, IB=-5mA IC=-800mA, IB=-5mA IC=-800mA, IB=-5mA IC=-1A, IB=-5mA Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * VBE(sat) IC=-1A,IB=-5mA VBE(ON) IC=-1A,VCE=-5V IC=-10mA, VCE=-5V IC=-100mA, VCE=-5V Static Forward Current Transfer Ratio* hFE IC=-1A, VCE=-5V IC=-2A, VCE=-5V IC=-5A, VCE=-5V IC=-1A, VCE=-2V Transition Frequency Output Capacitance Turn-On Time Turn-Off Time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo ton toff IC=-10mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz IC=-500mA, VCC=-20V IB= 1mA Testconditons Transistors Min -100 -100 -12 Typ -130 -116 -17 Max Unit V V V -10 -200 -10 -0.68 -0.75 -0.72 -0.80 -0.78 -0.86 -0.86 -0.97 -0.72 -0.90 -1.05 -1.6 -1.3 60K 20K 15K 5K 60K 50K 15K 150 20K 140 14 460 1200 25 -1.75 -1.75 nA nA nA V V V V V V V V MHz pF ns ns Marking Marking 734 2 www.kexin.com.cn