FMMTL619

SMD S MD Type Medium Power Transistor FMMTL619 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating 100 50 5 1.25 2 200 500 -55 to +150 Unit V V V A A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMTL619 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cut-off current Emitter-base current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=5mA* V(BR)EBO IE=100ìA ICBO IEBO VCB=40V VEB=4V Testconditons Transistors IC Min 100 50 5 Typ 210 70 8.5 Max Unit V V V 10 10 24 60 100 195 1020 895 200 300 200 100 30 400 450 400 230 50 180 6 182 379 8 45 100 180 330 1100 1000 nA nA Collector-emitter saturation voltage IC=100mA, IB=10mA* IC=250mA, IB=10mA* VCE(sat) IC=500mA, IB=25mA* IC=1.25A, IB=125mA* VBE(sat) IC=1.25A, IB=125mA* VBE(on) IC=1.25A, VCE=2V* IC=10mA, VCE=5V IC=200mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=1A, VCC=10V IB1=-IB2=10mA mV Base-emitter saturation voltage Base-emitter ON voltage mV mV DC current gain hFE Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time * Pulse test: tp 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking L69 2 www.kexin.com.cn