FMMTL717

SMD S MD Type Medium Power Transistor FMMTL717 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating -12 -12 -5 -1.25 -4 -200 -500 -55 to +150 Unit V V V A A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMTL718 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cut-off current Emitter-base current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA* V(BR)EBO IE=-100ìA ICBO IEBO VCB=-10V VEB=-4V Testconditons Transistors IC Min -12 -12 -5 Typ -35 -25 -8.5 Max Unit V V V -10 -10 -24 -94 -160 -200 -40 -140 -240 -290 nA nA Collector-emitter saturation voltage IC=-100mA, IB=-10mA* IC=-500mA, IB=-20mA* VCE(sat) IC=-1A, IB=-50mA* IC=-1.25A,IB=-50mA VBE(sat) IC=-1.25A, IB=-50mA* VBE(on) IC=-1.25A, VCE=-2V* IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz IC=-1A, VCC=-10V IB1=IB2=-10mA 300 300 180 100 50 mV Base-emitter saturation voltage Base-emitter ON voltage -970 -1100 -875 490 450 275 180 110 205 15 76 149 20 -1000 mV mV DC current gain hFE Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time * Pulse test: tp 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking L77 2 www.kexin.com.cn