FMMTL718

SMD S MD Type Medium Power Transistor FMMTL718 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Very low equivalent on-resistance;RCE(sat)=210mÙ at 1.5A. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating -20 -20 -5 -1 -2 -200 -500 -55 to +150 Unit V V V A A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMTL718 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cut-off current Emitter-base current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA* V(BR)EBO IE=-100ìA ICBO IEBO VCB=-15V VEB=-4V Testconditons Transistors IC Min -20 -20 -5 Typ -65 -55 -8.8 Max Unit V V V -10 -10 -33 -130 -230 -315 -50 -180 -320 -450 nA nA Collector-emitter saturation voltage IC=-100mA, IB=-10mA* VCE(sat) IC=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.5A,IB=-100mA VBE(sat) IC=-1.25A, IB=-100mA* VBE(on) IC=-1.25A, VCE=-2V* IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-1A, VCE=-2V* IC=-1.5A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz IC=-1A, VCC=-10V IB1=IB2=-10mA 300 300 200 120 50 mV Base-emitter saturation voltage Base-emitter ON voltage -950 -1100 -850 500 450 320 200 80 265 9 108 121 12 -1000 mV mV DC current gain hFE Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time * Pulse test: tp 300 ìs; d 0.02. fT Cobo t(on) t(off) MHz pF ns ns Marking Marking L78 2 www.kexin.com.cn