FZT1047A

S MD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1047A SOT-223 Transistors Unit: mm +0.2 3.50-0.2 Features VCEO = 10V. 5 Amp continuous current. 20 Amp pulse current. Low saturation voltage. High gain. Extremely low equivalent on-resistance; RCE(sat) = 44mÙ at 5A. 1 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating 35 10 5 5 20 500 2.5 -55 to +150 Unit V V V A A mA W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT1047A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=20V VCE=20V VEB=4V Testconditons Transistors Min 35 10 5 Typ 65 16 8.9 0.3 0.3 0.3 25 50 140 220 925 890 Max Unit V V V 10 10 10 40 70 200 350 1000 975 nA nA nA Collector-emitter saturation voltage * IC=0.5A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=3A, IB=15mA IC=5A, IB=25mA VBE(sat) IC=5A, IB=250mA VBE(on) IC=5A, VCE=2V IC=10mA, VCE=2V* IC=0.5A, VCE=2V* 280 290 300 200 60 mV Base-emitter saturation voltage * Base-emitter ON voltage * mV mV 430 440 450 330 110 150 85 130 230 110 MHz pF ns ns 1200 Static Forward Current Transfer Ratio * hFE IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=4A, VCC=10V IB1=IB2=40mA 2 www.kexin.com.cn