FZT1051A

S MD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1051A Features VCEO = 40V. 5 Amp continuous current. 20 Amp pulse current. Low saturation voltage. High gain. Extremely low equivalent on-resistance; RCE(sat) = 50mÙ at 5A. 1 2 2.9 4.6 3 +0.1 3.00-0.1 Transistors SOT-223 +0.2 6.50-0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 base +0.1 0.70-0.1 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating 150 40 5 5 10 500 2.5 -55 to +150 Unit V V V A A mA W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT1051A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector-emitter cut-off current Emitter Cut-Off Current Symbol Testconditons Min 150 40 5 Transistors Typ 190 60 9 0.3 0.3 0.3 17 85 140 250 980 915 Max Unit V V V V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=120V VCE=120V VEB=4V 10 10 10 25 120 180 340 1100 1000 nA nA nA Collector-emitter saturation voltage * IC=0.2A, IB=10mA IC=1A, IB=10mA VCE(sat) IC=2A, IB=20mA IC=5A, IB=100mA VBE(sat) IC=5A, IB=100mA VBE(on) IC=5A, VCE=2V IC=10mA, VCE=2V* 290 270 130 40 mV Base-emitter saturation voltage * Base-emitter ON voltage * mV mV 440 450 220 55 155 27 220 540 40 MHz pF ns ns 1200 Static Forward Current Transfer Ratio hFE IC=1A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=3A, VCC=10V IB1=IB2=30mA 2 www.kexin.com.cn