FZT1053A

S MD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1053A SOT-223 Transistors Unit: mm +0.2 3.50-0.2 Features VCEO = 75V. 4.5 Amp continuous current. 10 Amp pulse current. Low saturation voltage. High gain. Extremely low equivalent on-resistance; RCE(sat) = 78mÙ at 4.5A. 1 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating 150 75 7.5 4.5 10 500 2.5 -55 to +150 Unit V V V A A mA W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT1053A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO ICES IEBO VCB=120V VCE=120V VEB=4V Testconditons Transistors Min 150 75 7.5 Typ 250 100 8.8 0.9 1.5 0.3 21 55 150 160 350 900 825 Max Unit V V V 10 10 10 30 75 200 210 440 1000 950 nA nA nA Collector-emitter saturation voltage * IC=0.2A, IB=20mA IC=0.5A, IB=20mA VCE(sat) IC=1A, IB=10mA IC=2A, IB=100mA IC=4.5A, IB=200mA VBE(sat) IC=3A, IB=100mA VBE(on) IC=3A, VCE=2V IC=10mA, VCE=2V* IC=0.5A, VCE=2V* 270 300 300 40 mV Base-emitter saturation voltage * Base-emitter ON voltage * mV mV 440 450 450 60 20 140 21 162 900 30 MHz pF ns ns 1200 Static Forward Current Transfer Ratio hFE IC=1A, VCE=2V* IC=4.5A, VCE=2V* IC=10A, VCE=2V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz IC=2A, VCC=50V IB1=IB2=20mA 2 www.kexin.com.cn